DocumentCode
2387648
Title
First Demonstration of AC Gain From a Single-walled Carbon Nanotube Common-Source Amplifier
Author
Amlani, Islamshah ; Lewis, Jonathan ; Lee, King ; Zhang, Ruth ; Deng, Jie ; Wong, H. S Philip
Author_Institution
Embedded, Systems Research, Motorola Labs, Tempe, AZ 85284, U.S.A.
fYear
2006
fDate
Dec. 2006
Firstpage
1
Lastpage
4
Abstract
First demonstration of AC gain from a single-walled carbon nanotube transistor is presented. A top-gated carbon nanotube field-effect transistor (CNFET) is configured as a common-source amplifier and frequency response function of the amplifier is measured. Evidence of unambiguous signal amplification is observed in time domain as well as frequency domain up to a unity gain frequency of approximately 560 kHz. The observed roll-off in frequency is solely due to the RC time constant of the measurement apparatus. A specifically designed circuit compatible SPICE model for the CNFET is used to model both DC and AC characteristic with the same set of physical parameters for the first time. Good agreement between measurement and simulation is obtained. For a device without the parasitic load capacitance, the predicted intrinsic unity voltage gain frequency is 29 GHz and the cut-off frequency is ~ 50 GHz.
Keywords
CNTFETs; Carbon nanotubes; Circuit simulation; Cutoff frequency; Frequency domain analysis; Frequency measurement; Frequency response; Parasitic capacitance; SPICE; Time measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location
San Francisco, CA, USA
Print_ISBN
1-4244-0439-8
Electronic_ISBN
1-4244-0439-8
Type
conf
DOI
10.1109/IEDM.2006.346843
Filename
4154262
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