Physical Model for Surface Annihilation of Silicon Interstitials during Annealing

Author

Zhang, Xiao ; Yu, Min ; Zhan, Kai ; Ren, Liming ; Huang, Ru ; Zhang, Xing ; Wang, Yangyuan

Author_Institution

Inst. of Microelectron., Peking Univ., Beijing

fYear

0

fDate

0-0 0

Firstpage

58

Lastpage

61

Abstract

Surface annihilation is the main mechanism through which implantation defects are annealed out from Si wafer. Surface annihilation possibility of silicon interstitials has obvious impact on total diffusion of dopant as well as junction depth. In this paper, a model on variation of surface annihilation possibility for silicon interstitials is proposed. By considering the surface annihilation rate and desorption rate and surface defect point, the analytical model for effective surface annihilation possibility is developed and verified. The impact of surface annihilation possibility on enhanced diffusion is simulated

Keywords

annealing; boron; diffusion; elemental semiconductors; interstitials; ion implantation; semiconductor doping; silicon; Si wafer; Si:B; annealing; desorption rate; enhanced diffusion; implantation defects; junction depth; silicon interstitials; surface annihilation; surface defect point; total dopant diffusion; Absorption; Analytical models; Annealing; Chemistry; Microelectronics; Predictive models; Semiconductor device modeling; Semiconductor process modeling; Silicon; Surface structures;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology, 2006. IWJT '06. International Workshop on

Conference_Location

Shanghai

Print_ISBN

1-4244-0047-3

Type

conf

DOI

10.1109/IWJT.2006.220861

Filename

1669448