DocumentCode :
2387700
Title :
Application of novel nozzle-scan coating technique to ferroelectric film fabrication
Author :
Okuwada, Kumi ; Ito, Shin-ichi ; Kitano, Takahiro ; Akimoto, Masami ; Okumura, Katsuya
Author_Institution :
Process & Manuf. Eng. Center, Toshiba Corp., Yokohama, Japan
fYear :
2000
fDate :
2000
Firstpage :
399
Lastpage :
402
Abstract :
A novel "nozzle-scan coating" technique, which could dramatically reduce the material waste and the rinse, was applied to fabricate ferroelectric thin film capacitors. In this coating technique, the dispenser nozzle is constantly scanning back and forth while the wafer is sent at a scan pitch in the direction normal to the nozzle scan direction. The thickness range of the obtained film was smaller than 5% for an 8 inch wafer. Ferroelectric performance in a test capacitor of Pt/SrBi2(Ta,Nb)2O9/Pt was equal to that by the conventional spin-coating technique. The coating time is within 60 sec for an 8 inch wafer with 50-75% of the solution efficiency. This technique would reduce the material cost to 1/10 and has an environmental merit of reducing waste of the organic rinse
Keywords :
bismuth compounds; ferroelectric capacitors; ferroelectric thin films; liquid phase deposition; strontium compounds; tantalum compounds; thin film capacitors; 60 sec; 8 inch; Pt-SrBi2(TaNb)2O9-Pt; ferroelectric film fabrication; ferroelectric thin film capacitors; nozzle-scan coating technique; organic rinse; Annealing; Capacitors; Coatings; Costing; Costs; Fabrication; Ferroelectric films; Ferroelectric materials; Inorganic materials; Waste materials;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Manufacturing, 2000. Proceedings of ISSM 2000. The Ninth International Symposium on
Conference_Location :
Tokyo
ISSN :
1523-553X
Print_ISBN :
0-7803-7392-8
Type :
conf
DOI :
10.1109/ISSM.2000.993697
Filename :
993697
Link To Document :
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