Application of novel nozzle-scan coating technique to ferroelectric film fabrication

Author

Okuwada, Kumi ; Ito, Shin-ichi ; Kitano, Takahiro ; Akimoto, Masami ; Okumura, Katsuya

Author_Institution

Process & Manuf. Eng. Center, Toshiba Corp., Yokohama, Japan

fYear

2000

fDate

2000

Firstpage

399

Lastpage

402

Abstract

A novel "nozzle-scan coating" technique, which could dramatically reduce the material waste and the rinse, was applied to fabricate ferroelectric thin film capacitors. In this coating technique, the dispenser nozzle is constantly scanning back and forth while the wafer is sent at a scan pitch in the direction normal to the nozzle scan direction. The thickness range of the obtained film was smaller than 5% for an 8 inch wafer. Ferroelectric performance in a test capacitor of Pt/SrBi₂(Ta,Nb)₂O₉/Pt was equal to that by the conventional spin-coating technique. The coating time is within 60 sec for an 8 inch wafer with 50-75% of the solution efficiency. This technique would reduce the material cost to 1/10 and has an environmental merit of reducing waste of the organic rinse

Keywords

bismuth compounds; ferroelectric capacitors; ferroelectric thin films; liquid phase deposition; strontium compounds; tantalum compounds; thin film capacitors; 60 sec; 8 inch; Pt-SrBi₂(TaNb)₂O₉-Pt; ferroelectric film fabrication; ferroelectric thin film capacitors; nozzle-scan coating technique; organic rinse; Annealing; Capacitors; Coatings; Costing; Costs; Fabrication; Ferroelectric films; Ferroelectric materials; Inorganic materials; Waste materials;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Manufacturing, 2000. Proceedings of ISSM 2000. The Ninth International Symposium on

Conference_Location

Tokyo

ISSN

1523-553X

Print_ISBN

0-7803-7392-8

Type

conf

DOI

10.1109/ISSM.2000.993697

Filename

993697