Implementation of a carbon doped low-k material for 0.18 micron technology

Author

Hsia, Wei-Jen ; Catabay, Wilbur ; Lu, Michael ; Perng, D.C.

Author_Institution

LSI Logic Corp., Santa Clara, CA, USA

fYear

2000

fDate

2000

Firstpage

403

Lastpage

406

Abstract

In the development of interconnect architecture for future technologies, LSI has determined that adoption of low-k dielectrics will give higher performance gain as opposed to the replacement of aluminum with copper. The goal is to integrate a robust low-k material for LSI´s 0.18 μm subtractive aluminum technology with at least 20% capacitance reduction. As a result we have successfully integrated and qualified a flowable carbon doped low-k-film. Dielectric constant ranges from 2.8 to 3.5. We have achieved comparable via resistance performance and 20% to 35% reductions in the line-to-line capacitance compared to the conventional HDP scheme. Greater than 90% system uptime was obtained during the marathon. The process has been released to manufacturing with statistical process control monitoring for the past few months.

Keywords

MOS integrated circuits; carbon; dielectric thin films; integrated circuit interconnections; integrated circuit manufacture; permittivity; statistical process control; 0.18 micron; 0.18 micron technology; C doped low-k material; capacitance reduction; dielectric constant; interconnect architecture; line-to-line capacitance; low-k-film; resistance performance; statistical process control; Aluminum; Capacitance; Copper; Dielectric constant; Dielectric materials; Large scale integration; Manufacturing processes; Organic materials; Performance gain; Robustness;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Manufacturing, 2000. Proceedings of ISSM 2000. The Ninth International Symposium on

ISSN

1523-553X

Print_ISBN

0-7803-7392-8

Type

conf

DOI

10.1109/ISSM.2000.993698

Filename

993698