Title :
Implementation of a carbon doped low-k material for 0.18 micron technology
Author :
Hsia, Wei-Jen ; Catabay, Wilbur ; Lu, Michael ; Perng, D.C.
Author_Institution :
LSI Logic Corp., Santa Clara, CA, USA
Abstract :
In the development of interconnect architecture for future technologies, LSI has determined that adoption of low-k dielectrics will give higher performance gain as opposed to the replacement of aluminum with copper. The goal is to integrate a robust low-k material for LSI´s 0.18 μm subtractive aluminum technology with at least 20% capacitance reduction. As a result we have successfully integrated and qualified a flowable carbon doped low-k-film. Dielectric constant ranges from 2.8 to 3.5. We have achieved comparable via resistance performance and 20% to 35% reductions in the line-to-line capacitance compared to the conventional HDP scheme. Greater than 90% system uptime was obtained during the marathon. The process has been released to manufacturing with statistical process control monitoring for the past few months.
Keywords :
MOS integrated circuits; carbon; dielectric thin films; integrated circuit interconnections; integrated circuit manufacture; permittivity; statistical process control; 0.18 micron; 0.18 micron technology; C doped low-k material; capacitance reduction; dielectric constant; interconnect architecture; line-to-line capacitance; low-k-film; resistance performance; statistical process control; Aluminum; Capacitance; Copper; Dielectric constant; Dielectric materials; Large scale integration; Manufacturing processes; Organic materials; Performance gain; Robustness;
Conference_Titel :
Semiconductor Manufacturing, 2000. Proceedings of ISSM 2000. The Ninth International Symposium on
Print_ISBN :
0-7803-7392-8
DOI :
10.1109/ISSM.2000.993698
