Advantageous Decaborane Ion Implantation for Ultra-shallow Junction of PMOSFETs Compared with Boron Monomer Implantation into Germanium Preamorphized Layer

Author

Aoyama, Takayuki ; Umisedo, Sei ; Hamamoto, Nariaki ; Nagayama, Tsutomu ; Tanjyo, Masayasu

Author_Institution

Fujitsu Labs. Ltd., Tokyo

fYear

0

fDate

0-0 0

Firstpage

88

Lastpage

91

Abstract

We report the advantage of the decaborane (B₁₀H_x ⁺) ion implantation for sub-40-nm-gate-length PMOSFETs compared with conventional boron monomer ion implantation into pre-amorphized layer. PMOSFETs with decaborane ion implantation have a 5% higher on-current than those with boron monomer into pre-amorphized layer. In addition, the threshold voltage fluctuation of the PMOSFETs is also smaller. This high performance of the PMOSFETs is caused by high carrier activation of the decaborane ion implanted layer. We speculated that the high carrier activation results from the surface amorphous layer and undamaged crystal substrate with smooth amorphous/crystal interface due to the cracking of decaborane

Keywords

MOSFET; amorphisation; amorphous semiconductors; boron compounds; elemental semiconductors; germanium; interface roughness; ion implantation; semiconductor doping; semiconductor thin films; Ge:B₁₀H_x; boron monomer implantation; carrier activation; cracking; crystal substrate; decaborane ion implantation; germanium preamorphized layer; on-current; preamorphized layer; smooth amorphous/crystal interface; sub-40-nm-gate-length PMOSFET; surface amorphous layer; threshold voltage fluctuation; ultra-shallow junction; Amorphous materials; Boron; Capacitance-voltage characteristics; Fluctuations; Germanium; Ion implantation; MOSFETs; Stress; Surface resistance; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology, 2006. IWJT '06. International Workshop on

Conference_Location

Shanghai

Print_ISBN

1-4244-0047-3

Type

conf

DOI

10.1109/IWJT.2006.220867

Filename

1669454