Title :
PLZT based MEMS device
Author :
Singh, R. ; Tripathi, A.K. ; Chandra, S. ; Goe, T.C.
Author_Institution :
Centre for Appl. Res. in Electron., Indian Inst. of Technol., Delhi, India
Abstract :
Pb(Zr,Ti)O3, PZT thin films and their modified compositions have attracted great attention in recent years for their use in microelectromechanical systems (MEMS). In this paper, lanthanum modified PZT thin films have been deposited on platinised silicon. The parameters, saturation polarization (PS), remanent polarization (PR) and coercive field (EC) of the polarization-electric field hysteresis loop are presented for 0.5 μm thick PLZT thin film of composition (8/60/40). The structural and dielectric properties of the film are also presented. To show the possible integration of the piezoelectric films in MEMS, a simple device has been fabricated using silicon micromachining technology. The resonance frequency of this device was measured as 8.45 MHz and the device was tested for a vibration sensor.
Keywords :
diaphragms; dielectric hysteresis; dielectric polarisation; dielectric relaxation; lanthanum compounds; lead compounds; micromachining; micromechanical devices; microsensors; piezoelectric thin films; piezoelectric transducers; sol-gel processing; vibration measurement; 0.5 micron; 8.45 MHz; PLZT based MEMS device; PLZT thin films; PLZT-Pt-Si; PbLaZrO3TiO3-Pt-Si; Si micromachining technology; coercive field; dielectric properties; microelectromechanical systems; piezoelectric films; platinised Si; polarization-electric field hysteresis loop; remanent polarization; resonance frequency; saturation polarization; structural properties; vibration sensor; Dielectric thin films; Lanthanum; Microelectromechanical devices; Microelectromechanical systems; Micromechanical devices; Piezoelectric films; Polarization; Silicon; Transistors; Vibration measurement;
Conference_Titel :
Electrets, 2002. ISE 11. Proceedings. 11th International Symposium on
Print_ISBN :
0-7803-7560-2
DOI :
10.1109/ISE.2002.1043026
