DocumentCode
2387816
Title
A New Method for Mapping Ultra-Shallow Junction Leakage Currents
Author
Chen, James T C ; Dimitrova, Tatiana ; Dimitrov, Dimitar
Author_Institution
Four Dimensions, Inc., Hayward, CA
fYear
0
fDate
0-0 0
Firstpage
100
Lastpage
103
Abstract
A method for mapping ultra-shallow junction (USJ) leakage currents at a selected bias voltage is proposed and its measurement principle is explained. Experimental results on some samples in Borland´s recent round robin experiment are shown and discussed. Comparison with leakage measurement of the sheet resistance-leakage current (RsL) technique is made
Keywords
electric current measurement; electrical resistivity; leakage currents; p-n junctions; bias voltage; mapping; measurement principle; sheet resistance-leakage current technique; ultra-shallow junction leakage currents; Area measurement; Capacitance measurement; Current measurement; Differential equations; Electrical resistance measurement; Leakage current; Monitoring; Probes; Surface resistance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Junction Technology, 2006. IWJT '06. International Workshop on
Conference_Location
Shanghai
Print_ISBN
1-4244-0047-3
Type
conf
DOI
10.1109/IWJT.2006.220870
Filename
1669457
Link To Document