Title :
Interference method to fabricate phase shifter of alternate phase shifting mask
Author :
Lo, Yi-ling ; Tsai, Yi-kong
Author_Institution :
TSMC-Acer Semicond. Manuf. Corp., Hsinchu, Taiwan
Abstract :
It has been proposed that phase shifting mask (PSM) will be applied as a convenient and effective means of optical enhancement for IC lithography. Practical materials are needed for PSM at different wavelength lithography if these theoretical improvements are to be realized. Our goal is to create an alternating (Levenson) phase shifting mask (altPSM) with single-layer interference fringes structure of birefringent effect, corresponding to the patterns of enhance resolution being transferred into the wafer.
Keywords :
birefringence; integrated circuit measurement; integrated circuit technology; light interference; phase shifting masks; photolithography; IC lithography; Levenson mask; alternate phase shifting mask; birefringent effect; interference method; optical enhancement; phase shifter fabrication; single-layer interference fringes structure; Birefringence; Interference; Lithography; Optical materials; Phase shifters; Photonic integrated circuits;
Conference_Titel :
Semiconductor Manufacturing, 2000. Proceedings of ISSM 2000. The Ninth International Symposium on
Print_ISBN :
0-7803-7392-8
DOI :
10.1109/ISSM.2000.993703
