DocumentCode
2387840
Title
Adjacent-Reference and Self-Reference Sensing Scheme with Novel Orthogonal Wiggle MRAM Cell
Author
Hung, C.C. ; Chen, Y.S. ; Wang, D.Y. ; Lee, Y.J. ; Chen, W.C. ; Wang, Y.H. ; Yen, C.T. ; Yang, S.Y. ; Shen, K.H. ; Chang, C.P. ; Lin, C.S. ; Su, K.L. ; Cheng, H.C. ; Wang, Y.J. ; Tang, D.D.-L. ; Tsai, M.-J. ; Kao, M.J.
Author_Institution
Electron. & Optoelectronics Res. Labs., ITRL, Hsinchu
fYear
2006
fDate
11-13 Dec. 2006
Firstpage
1
Lastpage
4
Abstract
A novel orthogonal wiggle cell for either adjacent-reference architecture or self-reference architecture is proposed to enhance the read/write operation of MRAM. With reliability and non-disturbance of the device being verified, the mass production of MRAM is feasible because of the stabilized functionality and improved performance
Keywords
magnetoresistive devices; mass production; random-access storage; adjacent-reference architecture; magnetoresistive random access memory; mass production; orthogonal wiggle MRAM cell; self-reference architecture; Aluminum oxide; Antiferromagnetic materials; Crystallization; Electrodes; Laboratories; Logic; Semiconductor device manufacture; Switches; Tunneling; Writing;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location
San Francisco, CA
Print_ISBN
1-4244-0438-X
Electronic_ISBN
1-4244-0439-8
Type
conf
DOI
10.1109/IEDM.2006.346851
Filename
4154270
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