Title :
Reproducible and High-Resolution Analysis on Ultra-Shallow-Junction CMOSFETs by Scanning Spreading Resistance Microscopy
Author :
Zhang, L. ; Ohuchi, K. ; Adachi, K. ; Ishimaru, K. ; Takayanagi, M. ; Fukushima, Norishige
Author_Institution :
Adv. LSI Technol. Lab., Toshiba Corp., Kawasaki
Abstract :
Two-dimensional characterization of ultra-shallow junction CMOSFETs is performed by scanning spreading resistance microscopy (SSRM). Reproducible SSRM images with high spatial resolution are obtained by measuring in vacuum, and the wearing out characteristics of probes are also improved. Halo distribution of ultra-shallow junctions has very limited lateral diffusion and shows variation with decreasing gate length under ~60 nm. Source/drain extension (SDE) depth of ~10 nm is measured reproducibly on different gate length pMOSFETs
Keywords :
CMOS integrated circuits; MOSFET; diffusion; electric resistance measurement; integrated circuit measurement; semiconductor device measurement; gate length; halo distribution; high spatial resolution; high-resolution analysis; lateral diffusion; scanning spreading resistance microscopy; source-drain extension depth; ultra-shallow-junction CMOSFETs; Annealing; CMOSFETs; Electrical resistance measurement; MOSFETs; Microscopy; Performance evaluation; Pollution measurement; Probes; Reproducibility of results; Spatial resolution;
Conference_Titel :
Junction Technology, 2006. IWJT '06. International Workshop on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0047-3
DOI :
10.1109/IWJT.2006.220872
