Reproducible and High-Resolution Analysis on Ultra-Shallow-Junction CMOSFETs by Scanning Spreading Resistance Microscopy

Author

Zhang, L. ; Ohuchi, K. ; Adachi, K. ; Ishimaru, K. ; Takayanagi, M. ; Fukushima, Norishige

Author_Institution

Adv. LSI Technol. Lab., Toshiba Corp., Kawasaki

fYear

0

fDate

0-0 0

Firstpage

108

Lastpage

111

Abstract

Two-dimensional characterization of ultra-shallow junction CMOSFETs is performed by scanning spreading resistance microscopy (SSRM). Reproducible SSRM images with high spatial resolution are obtained by measuring in vacuum, and the wearing out characteristics of probes are also improved. Halo distribution of ultra-shallow junctions has very limited lateral diffusion and shows variation with decreasing gate length under ~60 nm. Source/drain extension (SDE) depth of ~10 nm is measured reproducibly on different gate length pMOSFETs

Keywords

CMOS integrated circuits; MOSFET; diffusion; electric resistance measurement; integrated circuit measurement; semiconductor device measurement; gate length; halo distribution; high spatial resolution; high-resolution analysis; lateral diffusion; scanning spreading resistance microscopy; source-drain extension depth; ultra-shallow-junction CMOSFETs; Annealing; CMOSFETs; Electrical resistance measurement; MOSFETs; Microscopy; Performance evaluation; Pollution measurement; Probes; Reproducibility of results; Spatial resolution;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology, 2006. IWJT '06. International Workshop on

Conference_Location

Shanghai

Print_ISBN

1-4244-0047-3

Type

conf

DOI

10.1109/IWJT.2006.220872

Filename

1669459