Electrical Characterization of Residual Bulk Defects after Laser Annealing of Implanted Shallow Junctions

A set of circular ring-gate JFET test structures has been designed with which differential measurements can be utilized to electrically investigate the residual defects after the ELA (excimer laser annealing) of implanted shallow junctions. The implanted ELA junction forms the top gate of the JFET and the diode I-V characteristics, sheet resistance and capacitance of the laterally uniform region below this gate, as well as the characteristics of the underlying pn junction formed between the bottom-gate and the source-channel-drain region can be determined. The measurements are used to evaluate the influence of various implantation parameters and laser energies on the residual defects associated with the shallow junction formation