DocumentCode
2387933
Title
A 3D pn junction structure for radiation energy conversion chip
Author
Li, Jinlong ; Xu, Shaohui ; Qu, Xinping ; Ru, Guoping ; Yu, Zhengyin ; Liu, Weili ; Song, Zhitang ; Wang, Lianwei
Author_Institution
Dept. of Electron., East China Normal Univ., Shanghai
fYear
0
fDate
0-0 0
Firstpage
123
Lastpage
126
Abstract
Macroporous silicon with well defined pattern on p-type silicon has been prepared by anodization in this report. A phosphorus diffusion step is employed for the formation of three dimensional pn junction structures. The I-V and C-V have been performed to characterize the "high aspect ratio" pn junction structure. Results have indicated the possibility for such a structure as the radiation conversion chip for future portable nuclear power cell
Keywords
anodisation; diffusion; elemental semiconductors; p-n junctions; phosphorus; porous semiconductors; silicon; Si:P; anodization; aspect ratio; macroporous silicon; p-type silicon; phosphorus diffusion; portable nuclear power cell; radiation energy conversion chip; three dimensional pn junction structures; Anodes; Capacitance-voltage characteristics; Cathodes; Energy conversion; Etching; Fabrication; Hafnium; Lighting; Radiation detectors; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Junction Technology, 2006. IWJT '06. International Workshop on
Conference_Location
Shanghai
Print_ISBN
1-4244-0047-3
Type
conf
DOI
10.1109/IWJT.2006.220876
Filename
1669463
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