Author :
Lu, J.P. ; Miles, D.S. ; Deloach, J. ; Yue, D.F. ; Chen, P.J. ; Bonifield, T. ; Crank, S. ; Yu, S.F. ; Mehrad, F. ; Obeng, Y. ; Ramappa, D.A. ; Corum, D. ; Guldi, R.L. ; Robertson, L.S. ; Liu, X. ; Hall, L.H. ; Xu, Y.Q. ; Lin, B.Y. ; Griffin, A.J. ; Johns
Author_Institution :
Silicon Technol. Dev., Texas Instrum., Dallas, TX
Abstract :
As CMOS technologies move into the 90 nm node and beyond, nickel (Ni) self-aligned suicide (SALICIDE) is transitioning from R&D into mainstream SC fabrication. In this paper, advantages and challenges of Ni SALICIDE process technology will be reviewed. The extension of Ni SALICIDE technology to fully silicided metal gates (FUSI) will be discussed
Keywords :
CMOS integrated circuits; nickel; reviews; semiconductor technology; CMOS devices; CMOS technologies; Ni; Nickel SALICIDE process technology; fully silicided metal gates; nickel self-aligned silicide; reviews; CMOS process; CMOS technology; Capacitive sensors; Fabrication; Germanium silicon alloys; Nickel; Research and development; Silicides; Silicon germanium; Temperature;
