DocumentCode
2387965
Title
Nickel SALICIDE Process Technology for CMOS Devices of 90nm Node and Beyond
Author
Lu, J.P. ; Miles, D.S. ; Deloach, J. ; Yue, D.F. ; Chen, P.J. ; Bonifield, T. ; Crank, S. ; Yu, S.F. ; Mehrad, F. ; Obeng, Y. ; Ramappa, D.A. ; Corum, D. ; Guldi, R.L. ; Robertson, L.S. ; Liu, X. ; Hall, L.H. ; Xu, Y.Q. ; Lin, B.Y. ; Griffin, A.J. ; Johns
Author_Institution
Silicon Technol. Dev., Texas Instrum., Dallas, TX
fYear
0
fDate
0-0 0
Firstpage
127
Lastpage
133
Abstract
As CMOS technologies move into the 90 nm node and beyond, nickel (Ni) self-aligned suicide (SALICIDE) is transitioning from R&D into mainstream SC fabrication. In this paper, advantages and challenges of Ni SALICIDE process technology will be reviewed. The extension of Ni SALICIDE technology to fully silicided metal gates (FUSI) will be discussed
Keywords
CMOS integrated circuits; nickel; reviews; semiconductor technology; CMOS devices; CMOS technologies; Ni; Nickel SALICIDE process technology; fully silicided metal gates; nickel self-aligned silicide; reviews; CMOS process; CMOS technology; Capacitive sensors; Fabrication; Germanium silicon alloys; Nickel; Research and development; Silicides; Silicon germanium; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Junction Technology, 2006. IWJT '06. International Workshop on
Conference_Location
Shanghai
Print_ISBN
1-4244-0047-3
Type
conf
DOI
10.1109/IWJT.2006.220877
Filename
1669464
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