DocumentCode
2387981
Title
A New Device Phenomenon in Cryogenically-Operated SiGe HBTs
Author
Yuan, Jiahui ; Zhu, Chendong ; Cui, Yan ; Cressler, John D. ; Niu, Guofu ; Liang, Qingqing ; Zhao, Enhai ; Appaswamy, Aravind ; Krithivasan, Ramkumar ; Joseph, Alvin
Author_Institution
Sch. of Electr. & Comput. Eng., Georgia Tech., Atlanta, GA
fYear
2006
fDate
11-13 Dec. 2006
Firstpage
1
Lastpage
4
Abstract
A new negative differential resistance (NDR) effect is reported for the first time in cryogenically-operated SiGe HBTs. A physical explanation based on heterojunction barrier effect (HBE) is presented, and confirmed using calibrated 2-D TCAD simulations. The ac consequences of this NDR effect and the impact of technology scaling on the phenomenon are also addressed
Keywords
Ge-Si alloys; cryogenics; heterojunction bipolar transistors; negative resistance; technology CAD (electronics); 2D TCAD simulations; SiGe; heterojunction barrier effect; heterojunction bipolar transistors; negative differential resistance; Charge carrier processes; Cryogenics; Drives; Electrons; Germanium silicon alloys; Heterojunction bipolar transistors; Microelectronics; Silicon germanium; Space technology; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location
San Francisco, CA
Print_ISBN
1-4244-0439-8
Electronic_ISBN
1-4244-0439-8
Type
conf
DOI
10.1109/IEDM.2006.346857
Filename
4154276
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