DocumentCode :
2387990
Title :
Importance of Science in Silicide Technology for Nect Technology Node SoC
Author :
Suguro, Kyoichi
Author_Institution :
Process & Manuf. Eng. Center, Toshiba Corp., Yokohama
fYear :
0
fDate :
0-0 0
Firstpage :
139
Lastpage :
142
Abstract :
Silicide materials have been changed according to purposes and application conditions for more than 20 years in Si LSIs. The main purpose of using silicides is lowering the resistances of doped Si layers including poly-Si lines. Silicide material was changed from low resistivity refractory metal suicide such as TiSi2 to near-noble metal silicides such as NiSi from the view point of less consumption of Si by silicidation. Actually, the pn junction leakage for shallow S/D can be drastically improved by NiSi as compared with disilicides. However, the thermal stability of monosilicides is required, since those monosilicides can be changed to disilicides, if disilicide phase exists in thermodynamic phase diagrams of metal-Si binary systems. In this paper, the importance of science applicable in handling NiSi skillfully in next generation SoC fabrication is discussed
Keywords :
nickel compounds; phase diagrams; semiconductor technology; solid-state phase transformations; system-on-chip; thermal stability; NiSi; doped Si layers; metal-Si binary systems; monosilicides; nect technology node SoC; pn junction leakage; poly-Si lines; resistivity refractory metal suicide; silicidation; silicide materials; silicide technology; thermal stability; thermodynamic phase diagrams; Acceleration; Conductivity; Electric variables measurement; Electrical resistance measurement; Etching; Materials science and technology; Phase measurement; Silicidation; Silicides; Thermal stability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Junction Technology, 2006. IWJT '06. International Workshop on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0047-3
Type :
conf
DOI :
10.1109/IWJT.2006.220879
Filename :
1669466
Link To Document :
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