• DocumentCode
    2387990
  • Title

    Importance of Science in Silicide Technology for Nect Technology Node SoC

  • Author

    Suguro, Kyoichi

  • Author_Institution
    Process & Manuf. Eng. Center, Toshiba Corp., Yokohama
  • fYear
    0
  • fDate
    0-0 0
  • Firstpage
    139
  • Lastpage
    142
  • Abstract
    Silicide materials have been changed according to purposes and application conditions for more than 20 years in Si LSIs. The main purpose of using silicides is lowering the resistances of doped Si layers including poly-Si lines. Silicide material was changed from low resistivity refractory metal suicide such as TiSi2 to near-noble metal silicides such as NiSi from the view point of less consumption of Si by silicidation. Actually, the pn junction leakage for shallow S/D can be drastically improved by NiSi as compared with disilicides. However, the thermal stability of monosilicides is required, since those monosilicides can be changed to disilicides, if disilicide phase exists in thermodynamic phase diagrams of metal-Si binary systems. In this paper, the importance of science applicable in handling NiSi skillfully in next generation SoC fabrication is discussed
  • Keywords
    nickel compounds; phase diagrams; semiconductor technology; solid-state phase transformations; system-on-chip; thermal stability; NiSi; doped Si layers; metal-Si binary systems; monosilicides; nect technology node SoC; pn junction leakage; poly-Si lines; resistivity refractory metal suicide; silicidation; silicide materials; silicide technology; thermal stability; thermodynamic phase diagrams; Acceleration; Conductivity; Electric variables measurement; Electrical resistance measurement; Etching; Materials science and technology; Phase measurement; Silicidation; Silicides; Thermal stability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Junction Technology, 2006. IWJT '06. International Workshop on
  • Conference_Location
    Shanghai
  • Print_ISBN
    1-4244-0047-3
  • Type

    conf

  • DOI
    10.1109/IWJT.2006.220879
  • Filename
    1669466