DocumentCode
2388019
Title
Thermal Immune NiSi Technology for Nano-scale CMOSFETs
Author
Lee, Hi-Deok ; Oh, Soon-Young ; Kim, Yong-Jin ; Lee, Won-Jae ; Han, In-Shik ; Cho, Ihl-Hyun ; Hwang, Sung-Bo ; Lee, Jong-Gun
Author_Institution
Dept. of Electron. Eng., Chungnam Nat. Univ., Daejeon
fYear
0
fDate
0-0 0
Firstpage
143
Lastpage
146
Abstract
In this paper, thermally stable nickel silicide (NiSi) technologies are investigated for nano-scale CMOS technology. Co/TiN double capping layer is investigated first. Co/TiN double capping is highly efficient in retarding Ni diffusion during high temperature post silicidation annealing by forming CoNiSi ternary layer at the top region of silicide. Then, hydrogen plasma implantation before Ni/Co/TiN deposition is shown to be desirable for nano-scale CMOS technology
Keywords
MOSFET; annealing; cobalt; diffusion; nickel; nickel compounds; plasma materials processing; thermal stability; titanium compounds; Co-TiN double capping layer; Ni-Co-TiN; NiSi; diffusion; high temperature post silicidation annealing; hydrogen plasma implantation; nanoscale CMOSFET; thermally stable nickel silicide technologies; CMOS technology; CMOSFETs; Hydrogen; Nickel; Plasma stability; Plasma temperature; Silicidation; Silicides; Thermal stability; Tin;
fLanguage
English
Publisher
ieee
Conference_Titel
Junction Technology, 2006. IWJT '06. International Workshop on
Conference_Location
Shanghai
Print_ISBN
1-4244-0047-3
Type
conf
DOI
10.1109/IWJT.2006.220880
Filename
1669467
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