Title :
Thermal Immune NiSi Technology for Nano-scale CMOSFETs
Author :
Lee, Hi-Deok ; Oh, Soon-Young ; Kim, Yong-Jin ; Lee, Won-Jae ; Han, In-Shik ; Cho, Ihl-Hyun ; Hwang, Sung-Bo ; Lee, Jong-Gun
Author_Institution :
Dept. of Electron. Eng., Chungnam Nat. Univ., Daejeon
Abstract :
In this paper, thermally stable nickel silicide (NiSi) technologies are investigated for nano-scale CMOS technology. Co/TiN double capping layer is investigated first. Co/TiN double capping is highly efficient in retarding Ni diffusion during high temperature post silicidation annealing by forming CoNiSi ternary layer at the top region of silicide. Then, hydrogen plasma implantation before Ni/Co/TiN deposition is shown to be desirable for nano-scale CMOS technology
Keywords :
MOSFET; annealing; cobalt; diffusion; nickel; nickel compounds; plasma materials processing; thermal stability; titanium compounds; Co-TiN double capping layer; Ni-Co-TiN; NiSi; diffusion; high temperature post silicidation annealing; hydrogen plasma implantation; nanoscale CMOSFET; thermally stable nickel silicide technologies; CMOS technology; CMOSFETs; Hydrogen; Nickel; Plasma stability; Plasma temperature; Silicidation; Silicides; Thermal stability; Tin;
Conference_Titel :
Junction Technology, 2006. IWJT '06. International Workshop on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0047-3
DOI :
10.1109/IWJT.2006.220880
