Tuning of Schottky barrier heights by silicidation induced impurity segregation

Schottky barrier height engineering by silicidation induced impurity segregation is demonstrated. The segregation of sulfur at the NiSi/Si interface leads to a gradual decrease of the SBH on n-Si(100) from 0.65 eV to 0.07 eV, and correspondingly, to an increase of the SBH on p-Si(100). Alternatively, the effective SBH of NiSi is reduced by As and B segregation during silicidation. Using these techniques, SB-MOSFETs were fabricated. The transistors with impurity segregation at source/drain to the silicon channel show significant performance improvements