• DocumentCode
    2388132
  • Title

    Simplified manufacturable band edge metal gate solution for NMOS without a capping layer

  • Author

    Harris, H.R. ; Alshareef, H. ; Wen, H.-C. ; Krishnan, S. ; Choi, K. ; Luan, H. ; Heh, D. ; Park, C.S. ; Park, H.B. ; Hussain, M. ; Ju, B.S. ; Kirsch, P.D. ; Song, S.C. ; Majhi, P. ; Lee, B.H. ; Jammy, R.

  • Author_Institution
    AMD, Austin, TX
  • fYear
    2006
  • fDate
    11-13 Dec. 2006
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    We describe an NMOS band edge solution that uses a metal gate doped with Lanthanide elements to achieve work functions as low as 4.05eV. The capping interlayers used in previous works are no longer necessary, and metal gate implementation became much simpler. Using this electrode, low Vth value and high mobility suitable for high performance devices are achieved at a practical EOT of 8Aring
  • Keywords
    MOSFET; work function; NMOS; band edge metal gate solution; work function; Annealing; CMOS process; Capacitors; Channel bank filters; Dielectrics; Electrodes; Erbium; MOS devices; Manufacturing; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2006. IEDM '06. International
  • Conference_Location
    San Francisco, CA
  • Print_ISBN
    1-4244-0439-8
  • Electronic_ISBN
    1-4244-0439-8
  • Type

    conf

  • DOI
    10.1109/IEDM.2006.346863
  • Filename
    4154282
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2388132