Title :
A novel in situ plasma treatment for damage-free metal/high-k gate stack RIE process
Author :
Ju, B.S. ; Song, S.C. ; Lee, T.H. ; Sassman, B. ; Kang, C.Y. ; Lee, B.H. ; Jammy, R.
Author_Institution :
SEMATECH, Austin, TX
Abstract :
A dry etch process for metal/high-k stacks has been developed to solve the integration problems associated with wet etch removal of high-k dielectric from the source and drain (S/D) areas. An in-situ plasma (O2) treatment has been introduced for the first time to cure the damage induced by the high-k dry etch process. Excellent electrical performances, such as dramatically improved leakage current, superior Ion/Ioff performance, and suppressed short channel effects (gate induced drain leakage, drain-induced barrier lowering, Vt distribution) are achieved. With this novel process, metal/high-k gate stack dry etch process for very short channel devices becomes more manufacturing worthy, which has been one of the critical integration challenges in realizing gate first CMOSFETs with metal/high-k
Keywords :
high-k dielectric thin films; oxygen; sputter etching; CMOSFET; O2; RIE process; damage-free metal gate stack; drain-induced barrier lowering; gate induced drain leakage; high-k dielectric; high-k dry etch process; high-k gate stack; in situ plasma treatment; short channel effects; Dielectric substrates; Dry etching; High K dielectric materials; High-K gate dielectrics; Leakage current; Plasma applications; Plasma chemistry; Plasma density; Plasma temperature; Wet etching;
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0439-8
Electronic_ISBN :
1-4244-0439-8
DOI :
10.1109/IEDM.2006.346866
