Title :
Thermal Stability improvement of Nickel Germanosilicide Utilizing Ni-Ta Alloy and Co/TiN Cappling layer for Nano-scale CMOS Technology
Author :
Yong-Jin Kim ; Soon-Young Oh ; Lee, Won-Jae ; Zhang, Ying-Ying ; Zhong, Zhun ; Jung, Soon-Yen ; Hee-Hwan Ji ; Cha, Han-Seob ; Kim, Yeong-Cheol ; Wang, Jin-Suk ; Lee, Hi-Deok
Author_Institution :
Dept. of Electron. Eng., Chungnam Nat. Univ., Daejeon
Abstract :
In this paper, highly thermal stable nickel germanosilicide utilizing Ni-Ta alloy and Co/TiN capping layer (Ni-Ta/Co/TiN tri-layer) is proposed for high performance strained Si CMOS technology. The proposed Nickel Germanosilicide utilizing Ni-Ta/Co/ TiN structure exhibits low temperature silicidation and wide range of rapid thermal process (RTP) process window. Moreover, sheet resistance shows stable characteristics up to 700degC for 30 min high temperature annealing and the surface of Ni-Ta/Co/TiN structure is much smoother than that of Ni/Co/TiN structure both after RTP and post-silicidation annealing. Therefore, the thermal immune nickel germanosilicide using the Ni-Ta/Co/TiN tri-layer is highly promising for future SiGe based nano-scale CMOS technology
Keywords :
annealing; cobalt; electric resistance; nickel alloys; nickel compounds; rapid thermal processing; semiconductor-insulator boundaries; tantalum alloys; thermal stability; titanium compounds; 30 min; 700 degC; NiGeSi; NiTa-Co-TiN; capping layer; high temperature annealing; low temperature silicidation; nanoscale CMOS technology; nickel germanosilicide; post-silicidation annealing; rapid thermal process; sheet resistance; thermal stability; CMOS technology; Cobalt alloys; Nickel alloys; Rapid thermal annealing; Rapid thermal processing; Silicon alloys; Surface resistance; Temperature distribution; Thermal stability; Tin alloys;
Conference_Titel :
Junction Technology, 2006. IWJT '06. International Workshop on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0047-3
DOI :
10.1109/IWJT.2006.220890
