• DocumentCode
    2388211
  • Title

    Influence of the Annealing Ambient on the Thermal Stability of Ni Silicide for nano-scale CMOSFETs

  • Author

    Oh, Soon-Young ; Lee, Hi-Deok ; Wang, Jin-Suk

  • Author_Institution
    Dept. of Electron. Eng., Chungnam Nat. Univ., Daejeon
  • fYear
    0
  • fDate
    0-0 0
  • Firstpage
    196
  • Lastpage
    199
  • Abstract
    The thermal stability of Ni silicide was evaluated using post-silicidation annealing ambient such O2, N2, and 30 mTorr vacuum. Among the conditions, the thermal stability of NiSi was improved in 30 mTorr vacuum condition due to the maintenance of stable phases after post-silicidation annealing without combining oxygen. Moreover, abnormal oxidation on the As-doped Si was also suppressed in vacuum condition
  • Keywords
    annealing; nickel compounds; oxidation; semiconductor-insulator boundaries; surface roughness; thermal stability; 30 mtorr; NiSi; Si:As; abnormal oxidation; annealing; nanoscale CMOSFET; oxygen; post-silicidation annealing; silicide; thermal stability; vacuum condition; Annealing; Atomic force microscopy; CMOSFETs; MOSFET circuits; Nickel; Oxidation; Plasma temperature; Silicides; Thermal resistance; Thermal stability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Junction Technology, 2006. IWJT '06. International Workshop on
  • Conference_Location
    Shanghai
  • Print_ISBN
    1-4244-0047-3
  • Type

    conf

  • DOI
    10.1109/IWJT.2006.220891
  • Filename
    1669478
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2388211