• DocumentCode
    2388322
  • Title

    Advanced Modeling and Simulation for Microelectronic Materials

  • Author

    Liu, Chun-Li

  • Author_Institution
    Device Phys. & Simulation, Freescale Semicond., Inc., Tempe, AZ
  • fYear
    0
  • fDate
    0-0 0
  • Firstpage
    220
  • Lastpage
    224
  • Abstract
    We have been using advanced modeling and simulation, especially first principles methods, as a valuable tool to design microelectronic materials systems. In this presentation, several successful examples will be given to demonstrate how advanced modeling and simulation through first principles have played an important role in materials design, processing, and reliability, and have positioned us far ahead of our competitors in some critical areas where predictive materials modeling and simulation had paid off. In this paper, I will focus on the development of a grain boundary Frenkel pair (GBFP) theory, a virtual design simulation procedure, and their applications in designs of advanced Cu alloy interconnects
  • Keywords
    ab initio calculations; copper; doping; grain boundaries; grain boundary diffusion; integrated circuit interconnections; integrated circuit modelling; integrated circuit reliability; Cu alloy interconnects; advanced modeling; first principles methods; grain boundary Frenkel pair theory; microelectronic materials systems; simulation; virtual design simulation procedure; Electromigration; Grain boundaries; Materials reliability; Microelectronics; Physics; Predictive models; Process design; Semiconductor materials; Semiconductor process modeling; Software packages;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Junction Technology, 2006. IWJT '06. International Workshop on
  • Conference_Location
    Shanghai
  • Print_ISBN
    1-4244-0047-3
  • Type

    conf

  • DOI
    10.1109/IWJT.2006.220896
  • Filename
    1669483