DocumentCode :
2388322
Title :
Advanced Modeling and Simulation for Microelectronic Materials
Author :
Liu, Chun-Li
Author_Institution :
Device Phys. & Simulation, Freescale Semicond., Inc., Tempe, AZ
fYear :
0
fDate :
0-0 0
Firstpage :
220
Lastpage :
224
Abstract :
We have been using advanced modeling and simulation, especially first principles methods, as a valuable tool to design microelectronic materials systems. In this presentation, several successful examples will be given to demonstrate how advanced modeling and simulation through first principles have played an important role in materials design, processing, and reliability, and have positioned us far ahead of our competitors in some critical areas where predictive materials modeling and simulation had paid off. In this paper, I will focus on the development of a grain boundary Frenkel pair (GBFP) theory, a virtual design simulation procedure, and their applications in designs of advanced Cu alloy interconnects
Keywords :
ab initio calculations; copper; doping; grain boundaries; grain boundary diffusion; integrated circuit interconnections; integrated circuit modelling; integrated circuit reliability; Cu alloy interconnects; advanced modeling; first principles methods; grain boundary Frenkel pair theory; microelectronic materials systems; simulation; virtual design simulation procedure; Electromigration; Grain boundaries; Materials reliability; Microelectronics; Physics; Predictive models; Process design; Semiconductor materials; Semiconductor process modeling; Software packages;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Junction Technology, 2006. IWJT '06. International Workshop on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0047-3
Type :
conf
DOI :
10.1109/IWJT.2006.220896
Filename :
1669483
Link To Document :
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