Title :
Unexpected mobility degradation for very short devices : A new challenge for CMOS scaling
Author :
Cros, Antoine ; Romanjek, Krunoslav ; Fleury, Dominique ; Harrison, Samuel ; Cerutti, Robin ; Coronel, Philippe ; Dumont, Benjamin ; Pouydebasque, Arnaud ; Wacquez, Romain ; Duriez, Blandine ; Gwoziecki, Romain ; Boeuf, Frederic ; Brut, Hugues ; Ghibaudo,
Author_Institution :
STMicroelectronics, Crolles
Abstract :
A new mobility degradation specific to short channel MOSFETs is studied and elucidated. Pocket implants/dopants pile-up, interface states/oxide charges, remote Coulomb scattering or ballisticity are insufficient to explain this degradation. The role of non-Coulombian (neutral) defects, which can be healed by increasing the annealing temperature, is evidenced
Keywords :
CMOS integrated circuits; carrier mobility; interface states; ion implantation; semiconductor doping; CMOS scaling; Coulomb scattering; annealing temperature; interface states; mobility degradation; nonCoulombian defects; oxide charges; pocket dopants; pocket implants; short channel MOSFET; Degradation; Doping; Electron mobility; Implants; MOSFETs; Magnetic field measurement; Performance evaluation; Scattering; Temperature; Thin film transistors;
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0438-X
Electronic_ISBN :
1-4244-0439-8
DOI :
10.1109/IEDM.2006.346872
