DocumentCode
2388363
Title
Reduction of threshold voltage fluctuation of p-MOSFETs by antimony super steep retrograde well channel
Author
Kawakami, Nobuyuki ; Egusa, Kazuhiko ; Shibahara, Kentaro
Author_Institution
Electron. Res. Lab., Kobe Steel Ltd., Hyogo, Japan
fYear
2001
fDate
29-30 Nov. 2001
Firstpage
7
Lastpage
10
Abstract
P-type MOSFETs were fabricated using Sb and As for super steep retrograde well channel formation. The steeper channel profile obtained by the Sb channel increased drain current with the almost same threshold voltage and its roll-off characteristics. In addition, V/sub th/ fluctuation was reduced by the Sb channel.
Keywords
MOSFET; antimony; arsenic; doping profiles; Si:Sb,As; antimony super steep retrograde well channel; dopant profile; drain current; p-MOSFET; roll-off characteristics; threshold voltage fluctuation; Degradation; Doping; Fabrication; Fluctuations; Impurities; Ion implantation; MOSFET circuits; Scattering; Steel; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Junction Technology, 2001. IWJT. Extended Abstracts of the Second International Workshop on
Conference_Location
Tokyo, Japan
Print_ISBN
4-89114-019-4
Type
conf
DOI
10.1109/IWJT.2001.993814
Filename
993814
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