• DocumentCode
    2388379
  • Title

    Stencil mask ion implantation technology for sub 100 nm technology node

  • Author

    Shibata, Takeshi ; Suguro, Kyoichi ; Sugihara, Kazuyoshi ; Nishihashi, Tsutomu

  • Author_Institution
    Semicond. Co., Toshiba Corp., Japan
  • fYear
    2001
  • fDate
    29-30 Nov. 2001
  • Firstpage
    11
  • Lastpage
    14
  • Abstract
    Recently we develop Stencil Mask ion Implantation Technology (SMIT). Using SMIT, the cost of fabricating semiconductor devices can be reduced. In view of the ion beam profile and system configuration, the SMIT system is advantageous in term of device performance. We propose SMIT and show some fundamental results of SMIT in this report.
  • Keywords
    ion implantation; masks; semiconductor technology; 100 nm; semiconductor device fabrication; stencil mask ion implantation; sub-100 nm technology; Costs; Electrostatics; Fabrication; Ion beams; Ion implantation; Manufacturing processes; Resists; Semiconductor device manufacture; Semiconductor devices; Space technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Junction Technology, 2001. IWJT. Extended Abstracts of the Second International Workshop on
  • Conference_Location
    Tokyo, Japan
  • Print_ISBN
    4-89114-019-4
  • Type

    conf

  • DOI
    10.1109/IWJT.2001.993816
  • Filename
    993816
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2388379