Title :
Stencil mask ion implantation technology for sub 100 nm technology node
Author :
Shibata, Takeshi ; Suguro, Kyoichi ; Sugihara, Kazuyoshi ; Nishihashi, Tsutomu
Author_Institution :
Semicond. Co., Toshiba Corp., Japan
Abstract :
Recently we develop Stencil Mask ion Implantation Technology (SMIT). Using SMIT, the cost of fabricating semiconductor devices can be reduced. In view of the ion beam profile and system configuration, the SMIT system is advantageous in term of device performance. We propose SMIT and show some fundamental results of SMIT in this report.
Keywords :
ion implantation; masks; semiconductor technology; 100 nm; semiconductor device fabrication; stencil mask ion implantation; sub-100 nm technology; Costs; Electrostatics; Fabrication; Ion beams; Ion implantation; Manufacturing processes; Resists; Semiconductor device manufacture; Semiconductor devices; Space technology;
Conference_Titel :
Junction Technology, 2001. IWJT. Extended Abstracts of the Second International Workshop on
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-019-4
DOI :
10.1109/IWJT.2001.993816
