Title :
Characterization of the diode leakage current in advanced 0.12 /spl mu/m CMOS technology. (Does stress play a role?)
Author :
Toren, Willem-Jan ; Perrin, Emmanuel ; Lunenborg, Meindert
Author_Institution :
Philips Semicond., Crolles, France
Abstract :
Anomalous N+/Pwell diode leakage current in advanced 0.12 /spl mu/m CMOS technology is investigated. This current is tunnel enhanced, and geometry dependent. Doping level variations can explain this current behaviour, as well as other width scalable deviations like the mobility. Stress in STI is the most probable cause of these doping variations.
Keywords :
CMOS integrated circuits; carrier mobility; integrated circuit technology; internal stresses; isolation technology; leakage currents; semiconductor diodes; semiconductor doping; tunnelling; 0.12 micron; CMOS technology; N+/P-well diode leakage current; STI stress; carrier mobility; doping level; tunnel enhanced current; CMOS technology; Current measurement; Geometry; Leakage current; Photonic band gap; Semiconductor device doping; Semiconductor device modeling; Semiconductor diodes; Stress; Transistors;
Conference_Titel :
Junction Technology, 2001. IWJT. Extended Abstracts of the Second International Workshop on
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-019-4
DOI :
10.1109/IWJT.2001.993817
