DocumentCode :
2388401
Title :
Self-Assembled Si-Ge Nanorings with Size and Composition-Control
Author :
He, J.H. ; Hsin, C.L. ; Wang, C.W. ; Chen, L.J.
Author_Institution :
Dept. of Mater. Sci. & Eng., Nat. Tsing Hua Univ., Hsinchu
fYear :
0
fDate :
0-0 0
Firstpage :
236
Lastpage :
239
Abstract :
Self-assembled single-crystal nanorings (NRs), as small as 10 nm, on Si and Si-Ge alloys have been fabricated by the mediation of Au nanodots. Si-Ge thin films were transformed into Si-Ge nanorings (silicon nanorings doped with controlled amount of Ge) with the assistance of Au catalysts deposited directly onto the thin film with a simple process. The mechanism of nanoring formation involves the mediation by Au nanodots and evaporation of Au-Si (Au-Si-Ge) eutectic liquid droplets at high temperatures. The process promises to be an effective nanofabrication technique to produce high density and uniform in size Si and Si-Ge nanorings
Keywords :
Ge-Si alloys; elemental semiconductors; germanium; nanostructured materials; nanotechnology; self-assembly; semiconductor doping; Au nanodots; SiGe:Ge; eutectic liquid droplets; nanofabrication technique; self-assembled single-crystal nanorings; Atomic force microscopy; Gold; Mediation; Nanoscale devices; Scanning electron microscopy; Self-assembly; Semiconductor thin films; Sputtering; Temperature; Transmission electron microscopy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Junction Technology, 2006. IWJT '06. International Workshop on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0047-3
Type :
conf
DOI :
10.1109/IWJT.2006.220900
Filename :
1669487
Link To Document :
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