• DocumentCode
    2388427
  • Title

    Impact of STI stress on the junction characteristics

  • Author

    Shiozawa, Katsuomi ; Horita, Katsuyuki ; Kuroi, Takashi ; Abe, Yuji ; Eimori, Takahis

  • Author_Institution
    Adv. Technol. R&D Center, Mitsubishi Electr. Corp., Itami, Japan
  • fYear
    2001
  • fDate
    29-30 Nov. 2001
  • Firstpage
    19
  • Lastpage
    20
  • Abstract
    Degradation of junction characteristics induced by STI stress has investigated in detail. STI stress is enhanced by the scaling of isolation pitch, the volume expansion induced by oxidation step, and the film stress of filling materials. The stress control becomes more important to keep the lower junction leakage current.
  • Keywords
    internal stresses; isolation technology; leakage currents; oxidation; semiconductor junctions; STI stress; filling material; film stress; isolation pitch scaling; junction characteristics; leakage current; oxidation; stress control; volume expansion; Character generation; Degradation; Diodes; Isolation technology; Leakage current; Oxidation; Research and development; Temperature distribution; Thermal stresses; Ultra large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Junction Technology, 2001. IWJT. Extended Abstracts of the Second International Workshop on
  • Conference_Location
    Tokyo, Japan
  • Print_ISBN
    4-89114-019-4
  • Type

    conf

  • DOI
    10.1109/IWJT.2001.993818
  • Filename
    993818
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2388427