Title :
Impact of STI stress on the junction characteristics
Author :
Shiozawa, Katsuomi ; Horita, Katsuyuki ; Kuroi, Takashi ; Abe, Yuji ; Eimori, Takahis
Author_Institution :
Adv. Technol. R&D Center, Mitsubishi Electr. Corp., Itami, Japan
Abstract :
Degradation of junction characteristics induced by STI stress has investigated in detail. STI stress is enhanced by the scaling of isolation pitch, the volume expansion induced by oxidation step, and the film stress of filling materials. The stress control becomes more important to keep the lower junction leakage current.
Keywords :
internal stresses; isolation technology; leakage currents; oxidation; semiconductor junctions; STI stress; filling material; film stress; isolation pitch scaling; junction characteristics; leakage current; oxidation; stress control; volume expansion; Character generation; Degradation; Diodes; Isolation technology; Leakage current; Oxidation; Research and development; Temperature distribution; Thermal stresses; Ultra large scale integration;
Conference_Titel :
Junction Technology, 2001. IWJT. Extended Abstracts of the Second International Workshop on
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-019-4
DOI :
10.1109/IWJT.2001.993818
