Title :
Plasma immersion ion implantation as an alternative doping technology for ULSI
Author_Institution :
Infineon Technol., IBM Corp., Hopewell Junction, NY, USA
Abstract :
Plasma immersion ion implantation (PIII) has much attracted attention as a promising and innovatory doping technology for silicon (Si) processing of ultra-large-scale-integrated circuits (ULSI). In this article, we review and demonstrate the most attractive application areas of PIII for the development of advanced devices. PIII not only shows its unique characteristics for each application area, but also improves device performances very remarkably.
Keywords :
ULSI; elemental semiconductors; integrated circuit technology; integrated circuit testing; ion implantation; plasma materials processing; semiconductor doping; silicon; Si; ULSI; device performances; doping technology; plasma immersion ion implantation; ultra-large-scale-integrated circuits; Capacitors; Electrodes; Integrated circuit technology; Ion implantation; Plasma immersion ion implantation; Random access memory; Semiconductor device doping; Silicon; Substrates; Ultra large scale integration;
Conference_Titel :
Junction Technology, 2001. IWJT. Extended Abstracts of the Second International Workshop on
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-019-4
DOI :
10.1109/IWJT.2001.993819
