• DocumentCode
    2388519
  • Title

    Surface concentration of primary ion species and its effect to depth profiling in SIMS analyses

  • Author

    Yoshikawa, S. ; Tsukamoto, K.

  • Author_Institution
    Matsushita Technoresearch, Inc, Osaka, Japan
  • fYear
    2001
  • fDate
    29-30 Nov. 2001
  • Firstpage
    45
  • Lastpage
    48
  • Abstract
    In Secondary Ion Mass Spectrometry (SIMS), the presence of primary ions on the sputtering surface is considered to enhance the secondary ion yields. In this work, the surface concentration profiles of Cs primary ions were investigated in details for Si using low energy oxygen primary ion bombardment in order to achieve accurate depth profiling with Cs primary ions.
  • Keywords
    elemental semiconductors; secondary ion mass spectra; silicon; sputtering; Cs; Cs primary ion species; O/sub 2/; Si; Si surface; depth profiling; low energy oxygen primary ion bombardment; secondary ion mass spectrometry; secondary ion yield; sputtering; surface concentration profile; Abstracts; Electronic mail; Hafnium; Ion beams; Mass spectroscopy; Semiconductor devices; Semiconductor impurities; Sputtering; Steady-state; Transient analysis;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Junction Technology, 2001. IWJT. Extended Abstracts of the Second International Workshop on
  • Conference_Location
    Tokyo, Japan
  • Print_ISBN
    4-89114-019-4
  • Type

    conf

  • DOI
    10.1109/IWJT.2001.993823
  • Filename
    993823
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2388519