• DocumentCode
    2388534
  • Title

    On the Surface Sulfidation of AlGaN/GaN Schottky Contacts

  • Author

    Chang, L.B. ; Chen, N.C. ; Chang, C.H.

  • Author_Institution
    Dept. of Electron. Eng., Chang-Gung Univ., Taoyuan
  • fYear
    0
  • fDate
    0-0 0
  • Firstpage
    258
  • Lastpage
    261
  • Abstract
    Non-sulfur-treated, (NH4)2S-treated, and P 2S5/(NH4)2S-treated AlGaN/GaN Schottky contacts are prepared and characterized. The variations in their Schottky barrier height and leakage current are studied. Then an ultra violet light (UV) exposition is also made during some of the sulfidation processes from which a speeding degradation phenomenon is found and reported
  • Keywords
    III-V semiconductors; Schottky barriers; aluminium compounds; gallium compounds; leakage currents; surface treatment; wide band gap semiconductors; AlGaN-GaN; AlGaN/GaN Schottky contacts; Schottky barrier height; leakage current; surface sulfidation; ultraviolet light exposition; Aluminum gallium nitride; Degradation; Gallium nitride; Gold; HEMTs; Leakage current; MODFETs; Schottky barriers; Temperature; Wideband;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Junction Technology, 2006. IWJT '06. International Workshop on
  • Conference_Location
    Shanghai
  • Print_ISBN
    1-4244-0047-3
  • Type

    conf

  • DOI
    10.1109/IWJT.2006.220905
  • Filename
    1669492
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2388534