Title :
On the Surface Sulfidation of AlGaN/GaN Schottky Contacts
Author :
Chang, L.B. ; Chen, N.C. ; Chang, C.H.
Author_Institution :
Dept. of Electron. Eng., Chang-Gung Univ., Taoyuan
Abstract :
Non-sulfur-treated, (NH4)2S-treated, and P 2S5/(NH4)2S-treated AlGaN/GaN Schottky contacts are prepared and characterized. The variations in their Schottky barrier height and leakage current are studied. Then an ultra violet light (UV) exposition is also made during some of the sulfidation processes from which a speeding degradation phenomenon is found and reported
Keywords :
III-V semiconductors; Schottky barriers; aluminium compounds; gallium compounds; leakage currents; surface treatment; wide band gap semiconductors; AlGaN-GaN; AlGaN/GaN Schottky contacts; Schottky barrier height; leakage current; surface sulfidation; ultraviolet light exposition; Aluminum gallium nitride; Degradation; Gallium nitride; Gold; HEMTs; Leakage current; MODFETs; Schottky barriers; Temperature; Wideband;
Conference_Titel :
Junction Technology, 2006. IWJT '06. International Workshop on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0047-3
DOI :
10.1109/IWJT.2006.220905
