Title :
Effect of Rapid Thermal Annealing on Ti/Al/Ni/Au Ohmic Contact to n-Al0.45Ga0.55N
Author :
Chen, Jun ; Li, Xue ; Li, Xiangyang
Author_Institution :
State Key Lab. of Transducer Technol., Chinese Acad. of Sci., Shanghai
Abstract :
The rapid thermal annealing effects on Ti/Al/Ni/Au Ohmic contact to n-Al0.45Ga0.55N are investigated by current-voltage (I-V) measurements and transmission line model (TLM). Experiment results indicated that with high Al fraction, it is easy to form ohmic contact to n-AlGaN. Our experiments show that the specific contact resistance (rhoc) depends on annealing temperature and time. The minimum of rhoc is obtained as 2.75 times 10-4 Omegacm2 at 550degC for 1 minute. Scanning electron microscopy (SEM) study showed that the surface morphology of the contact metal annealed at 550degC for 1 minute became somewhat degraded compared with that of other conditions
Keywords :
III-V semiconductors; aluminium; aluminium compounds; contact resistance; gallium compounds; gold; nickel; ohmic contacts; rapid thermal annealing; scanning electron microscopy; semiconductor-metal boundaries; surface morphology; titanium; wide band gap semiconductors; 1 min; 550 degC; SEM; Ti-Al-Ni-Au-Al0.45Ga0.55N; contact resistance; current-voltage measurements; n-Al0.45Ga0.55N; ohmic contact; rapid thermal annealing; scanning electron microscopy; surface morphology; transmission line model; Contact resistance; Current measurement; Electrical resistance measurement; Gold; Ohmic contacts; Rapid thermal annealing; Scanning electron microscopy; Surface morphology; Temperature dependence; Transmission line measurements;
Conference_Titel :
Junction Technology, 2006. IWJT '06. International Workshop on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0047-3
DOI :
10.1109/IWJT.2006.220906
