DocumentCode :
2388572
Title :
USJ technology solutions by stretching the limits of a lamp-based RTP system
Author :
Boas, Ryan ; Balasubramanian, Ramachandran ; Pham, Gia ; Ramamurthy, Senthil
Author_Institution :
Transistor Capacitor Group, Appl. Mater. Inc., Santa Clara, CA, USA
fYear :
2001
fDate :
29-30 Nov. 2001
Firstpage :
63
Lastpage :
66
Abstract :
Traditionally lamp-based RTP systems have been part of the limitations in meeting all the requirements for sub-100 nm device geometries. In this paper we present some data that shows the possibility of extending the capabilities of a production-proven technology to meet advanced performance targets through hardware, process and controller optimization.
Keywords :
rapid thermal processing; semiconductor junctions; 100 nm; lamp-based RTP system; ultra-shallow junction technology; Annealing; Boron; Capacitors; Electrical resistance measurement; Geometry; Hardware; Implants; Optimized production technology; Process control; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Junction Technology, 2001. IWJT. Extended Abstracts of the Second International Workshop on
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-019-4
Type :
conf
DOI :
10.1109/IWJT.2001.993827
Filename :
993827
Link To Document :
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