DocumentCode
2388589
Title
Rapid thermal processing using single wafer rapid thermal furnace
Author
Fukada, Takashi ; Yoo, Woo Sik ; Hiraga, Yasuhide ; Takahashi, Nobuaki
Author_Institution
WaferMasters, Inc., San Jose, CA, USA
fYear
2001
fDate
29-30 Nov. 2001
Firstpage
67
Lastpage
70
Abstract
Dry and wet oxidation film using single wafer rapid thermal furnace (SWRTF) has been characterized as a function of temperature and time. For dry oxidation, an effect of partial pressure of oxygen was also investigated. Wet oxidation was performed using steam simply generated by heating a water canister that is located near process chamber. In both cases of dry and wet oxidation using SWRTF, excellent oxide film thickness and repeatability were obtained.
Keywords
oxidation; rapid thermal processing; dry oxidation film; oxide film thickness; oxygen partial pressure; rapid thermal processing; repeatability; single wafer rapid thermal furnace; steam generation; water canister; wet oxidation film; Electrons; Energy efficiency; Furnaces; Gases; Oxidation; Rapid thermal processing; Silicon carbide; Temperature control; Thermal loading; Water heating;
fLanguage
English
Publisher
ieee
Conference_Titel
Junction Technology, 2001. IWJT. Extended Abstracts of the Second International Workshop on
Conference_Location
Tokyo, Japan
Print_ISBN
4-89114-019-4
Type
conf
DOI
10.1109/IWJT.2001.993828
Filename
993828
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