Title :
Improvement of dosimetry monitoring by Therma-Wave signal in indium implantation
Author :
Sano, Makoto ; Harada, Mitsuaki ; Kabasawa, Mitsuaki ; Sato, Fumiaki ; Sugitani, Michiro
Author_Institution :
Product Eng., Sumitomo Eaton Nova Corp., Ehime, Japan
Abstract :
Dosimetry of ion implantation is monitored mainly by sheet resistivity measurement or Therma-Wave measurement (TW). Due to low solubility of indium (In) in silicon, TW is adopted generally as dosimetry monitor. Repeatability of TW for In implantation was researched in order to improve monitoring accuracy. It was found that TW signal was influenced by conditions of implantation, wafer, and measurement.
Keywords :
dosimetry; elemental semiconductors; indium; ion implantation; photothermal effects; process monitoring; silicon; Si:In; Therma-Wave signal; dosimetry monitoring; indium ion implantation; silicon wafer; Abstracts; Annealing; Conductivity measurement; Dosimetry; Indium; Ion implantation; Monitoring; Reflectivity; Silicon; Time measurement;
Conference_Titel :
Junction Technology, 2001. IWJT. Extended Abstracts of the Second International Workshop on
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-019-4
DOI :
10.1109/IWJT.2001.993831
