SPE2/spl sim/Novel 700/spl deg/C selective epitaxial growth technology for elevated source/drain

A novel low thermal-budget process for elevated source/ drain (S/D) was developed utilizing solid phase epitaxy (SPE) followed by vapor phase selective etching. The high temperature H/sub 2/ pre-clean was omitted by the use of oxide mediated SPE (OMSPE). The maximum temperature through the process was only 700/spl deg/C. The vapor phase selective etching could also be performed at 700/spl deg/C. The polycrystalline-Si (poly-Si) gate was protected with SiN barrier so as not to be etched during the selective etching. This process is a potential solution for the elevated S/D structure for 0.1 /spl mu/m devices and beyond.