Stack-layered metals AuSiNi ohmic contact to n-InP

Author

Wen-Chang Huang ; Chih-Chia Wang

Author_Institution

Dept. of Electron. Eng., Kun Shan Univ., Tainan

fYear

0

fDate

0-0 0

Firstpage

291

Lastpage

294

Abstract

Ohmic contact scheme, Au/Si/Ni/n-InP, was studied in the research. A lowest specific contact resistance of 1.98times10^-6 omega-cm² was obtained after rapid thermal annealing (RTA) at 450degC for 30 sec. Two new phases, In₃Ni₂(012), Au₃In₂(114) were observed by X-ray diffraction analysis (XRD) after the ohmicity was reached. Both in-diffusion of the elements Au, Si and Ni and out-diffusion of In were observed by Auger analysis after the contact was RTA-450degC annealed. The ohmicity of the contact scheme was due to the silicon doping on the InP surface, and forming high density of electron concentration

Keywords

Auger effect; III-V semiconductors; X-ray diffraction; chemical interdiffusion; contact resistance; electron density; gold; gold compounds; indium compounds; nickel; ohmic contacts; rapid thermal annealing; semiconductor doping; semiconductor-metal boundaries; silicon; 30 s; 450 degC; Au-Si-Ni-InP; Au₃In₂; Auger analysis; In₃Ni₂; RTA; X-ray diffraction analysis; XRD; contact resistance; doping; electron concentration; ohmic contact; ohmicity; rapid thermal annealing; stack-layered metals; Contact resistance; Doping; Gold; Indium phosphide; Ohmic contacts; Rapid thermal annealing; Silicon; Thermal resistance; X-ray diffraction; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology, 2006. IWJT '06. International Workshop on

Conference_Location

Shanghai

Print_ISBN

1-4244-0047-3

Type

conf

DOI

10.1109/IWJT.2006.220914

Filename

1669501