Title :
Formation and characterization of aluminum-oxide by stack-layered metal structure Schottky diode
Author :
Huang, Wen-Chang ; Cai, Dong-Rong
Author_Institution :
Dept. of Electron. Eng., Kun Shan Univ., Tainan
Abstract :
A double metals structure, Pt/Al/n-InP diode was studied. An Al 2O3 thin film was formed at the contact interface of the Pt/Al/InP diode after thermal annealing. It was detected at the diffraction angle of 2thetas-20.4deg by X-ray diffraction (XRD) analysis after the diode was annealed at 300degC or 400degC for 10 min. Also, from secondary ion mass spectrum (SIMS) analysis, it was found that the Al2O3 thin film located at the contact interface of the Pt/Al/n-InP diode. The electrical characteristic was improved due to the formation of aluminum-oxide. The effective barrier height is equal to 0.74 eV which was measured on the annealed sample
Keywords :
III-V semiconductors; Schottky diodes; alumina; aluminium; annealing; contact resistance; indium compounds; platinum; secondary ion mass spectra; semiconductor-metal boundaries; thin films; 0.74 eV; 10 min; 300 degC; 400 degC; Al2O3; Pt-Al-InP; SIMS; X-ray diffraction; XRD; barrier height; contact interface; double metals structure; secondary ion mass spectrum; stack-layered metal structure Schottky diode; thermal annealing; Annealing; Contacts; Electric variables; Indium phosphide; Schottky diodes; Transistors; X-ray detection; X-ray detectors; X-ray diffraction; X-ray scattering;
Conference_Titel :
Junction Technology, 2006. IWJT '06. International Workshop on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0047-3
DOI :
10.1109/IWJT.2006.220915
