Title :
Raised source/drains with disposable spacers for sub 100 nm CMOS technologies
Author :
Meyer, K. De ; Kubicek, S. ; van Meer, H.
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
Raised source/drains (RSD) are considered as one of the advanced options for the sub 100 nm CMOS technologies. The purpose of using RSD is to alleviate the problem of the silicidation of ultra shallow junctions and to decrease series resistance. In this paper we will describe an RSD module with disposable nitride spacers which has been implemented in a 100 nm CMOS process. Integration issues will be highlighted as well.
Keywords :
CMOS integrated circuits; integrated circuit technology; 100 nm; CMOS technology; disposable nitride spacer; process integration; raised source/drain; series resistance; silicidation; ultra-shallow junction; CMOS process; CMOS technology; Dry etching; Epitaxial growth; Protection; Silicidation; Silicides; Space technology; Stability; Temperature;
Conference_Titel :
Junction Technology, 2001. IWJT. Extended Abstracts of the Second International Workshop on
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-019-4
DOI :
10.1109/IWJT.2001.993834
