Excimer-laser activation of dopants in silicon: a new concept for a uniform treatment over a whole die area

Author

Laviron, C. ; Semeria, M.N. ; Zahorski, D. ; Stehlé, M. ; Hernandez, M. ; Boulmer, J. ; Débarre, D. ; Kerrien, G.

Author_Institution

LETI/DTS, CEA/GRE, Grenoble, France

fYear

2001

fDate

29-30 Nov. 2001

Firstpage

91

Lastpage

94

Abstract

Formation of ultra shallow junction will need laser annealing process in an imminent future. The VEL 15 laser source from SOPRA allows to anneal in a single shot a complete die with /spl plusmn/3.5% uniformity, and with enough energy to melt silicon and activate dopants. Boron and BF/sub 2/ implanted wafers have been laser annealed, and then characterized with different techniques. Ultra shallow junction around 20 nm and less than 400 Ohms/sq have been performed. Feasibility of highly activated p-type junction is demonstrated with a whole die area exposition.

Keywords

boron; boron compounds; elemental semiconductors; laser beam annealing; semiconductor doping; semiconductor junctions; silicon; Si:B; Si:BF/sub 2/; excimer-laser dopants activation; laser annealing; ultra shallow junction; uniform treatment; Annealing; CMOS technology; Gas lasers; Laser stability; Optical pulses; Pulsed laser deposition; Rapid thermal processing; Semiconductor device manufacture; Semiconductor lasers; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology, 2001. IWJT. Extended Abstracts of the Second International Workshop on

Conference_Location

Tokyo, Japan

Print_ISBN

4-89114-019-4

Type

conf

DOI

10.1109/IWJT.2001.993835

Filename

993835