Title :
RF CMOS-MEMS Switch with Low-Voltage Operation for Single-Chip RF LSIs
Author :
Kuwabara, K. ; Sato, N. ; Shimamura, T. ; Morimura, H. ; Kodate, J. ; Sakata, T. ; Shigematsu, S. ; Kudou, K. ; Machida, K. ; Nakanishi, M. ; Ishii, H.
Author_Institution :
NTT Microsystem Integration Labs., NTT Corp.
Abstract :
This paper describes a novel RF CMOS-MEMS switch that integrates RF MEMS switches and CMOS control circuits. A single-pole 8-through RF CMOS-MEMS switch was fabricated and its operation at 3.3 V supply voltage was achieved. The switch was encapsulated with a thin film at wafer level to prevent destruction during packaging. Experimental results confirm that the switch has mechanical reliability for more than 1 billion cycles
Keywords :
CMOS integrated circuits; large scale integration; low-power electronics; microswitches; reliability; thin films; 3.3 V; CMOS control circuits; RF CMOS-MEMS switch; low-voltage operation; mechanical reliability; single-chip RF LSI; thin film; CMOS technology; Electrodes; Fabrication; Large scale integration; Radio frequency; Radiofrequency microelectromechanical systems; Springs; Switches; Switching circuits; Voltage control;
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0438-X
Electronic_ISBN :
1-4244-0439-8
DOI :
10.1109/IEDM.2006.346891
