DocumentCode :
2388843
Title :
Novel approaches for dopant placement and activation for sub-100nm gate devices
Author :
Variam, N. ; Felch, S. ; Jie, J. ; Mehta, S. ; Jeong, U.
Author_Institution :
Varian Semiconductor Equipment Associates
fYear :
2001
fDate :
29-30 Nov. 2001
Firstpage :
107
Lastpage :
108
Keywords :
Geometrical optics; Geometry; Implants; Production; Rapid thermal annealing; Solid lasers; Temperature control; Thermal engineering; Thermal resistance; Thermodynamics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Junction Technology, 2001. IWJT. Extended Abstracts of the Second International Workshop on
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-019-4
Type :
conf
DOI :
10.1109/IWJT.2001.993839
Filename :
993839
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2388843
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