DocumentCode
2388864
Title
CMOS and Interconnect Reliability - Advanced Gate Dielectric Reliability
fYear
2006
fDate
11-13 Dec. 2006
Firstpage
1
Lastpage
1
Keywords
Breakdown voltage; Degradation; Dielectric breakdown; Electric breakdown; Failure analysis; High K dielectric materials; High-K gate dielectrics; MOSFETs; NIST; Paper technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location
San Francisco, CA
Print_ISBN
1-4244-0438-X
Type
conf
DOI
10.1109/IEDM.2006.346892
Filename
4154311
Link To Document