Title :
CMOS and Interconnect Reliability - Advanced Gate Dielectric Reliability
Keywords :
Breakdown voltage; Degradation; Dielectric breakdown; Electric breakdown; Failure analysis; High K dielectric materials; High-K gate dielectrics; MOSFETs; NIST; Paper technology;
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0438-X
DOI :
10.1109/IEDM.2006.346892
