Title :
The Traps that cause Breakdown in Deeply Scaled SiON Dielectrics
Author :
Nicollian, Paul E. ; Krishnan, Anand T. ; Chancellor, Cathy A. ; Khamankar, Rajesh B.
Author_Institution :
Texas Instruments Inc., Dallas, TX
Abstract :
The paper shows that a minimum of two traps is required to cause breakdown in SiON films down to 10A. At least one trap must be an interface state and at least one must be a bulk state. At low voltages, the rate limiting step for breakdown is the generation of interface traps and is controlled by the release of H0
Keywords :
dielectric materials; electric breakdown; interface states; semiconductor thin films; silicon compounds; 10 A; SiON; breakdown; deeply scaled dielectrics; interface traps; semiconductor films; Acceleration; Anodes; Breakdown voltage; Design for quality; Dielectric breakdown; Electric breakdown; Electron traps; Hydrogen; Silicon; Stress;
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0438-X
Electronic_ISBN :
1-4244-0439-8
DOI :
10.1109/IEDM.2006.346893
