DocumentCode
2388902
Title
Universality of Off-State Degradation in Drain Extended NMOS Transistors
Author
Varghese, D. ; Kufluoglu, H. ; Reddy, V. ; Shichijo, H. ; Krishnan, S. ; Alam, M.A.
Author_Institution
Purdue Univ., West Lafayette, IN
fYear
2006
fDate
11-13 Dec. 2006
Firstpage
1
Lastpage
4
Abstract
Off-state degradation in drain extended NMOS transistors is studied. It is shown that the damage is primarily due to Si-O bonds broken by hot carriers. These hot carriers are generated through impact ionization of surface band-to-band tunneling (BTBT) current. The resultant degradation is found to be universal, enabling reliability projections at lower stress voltages and based on shorter duration tests, than previously anticipated
Keywords
MOSFET; hot carriers; impact ionisation; reliability; tunnelling; drain extended NMOS transistors; hot carriers; impact ionization; off-state degradation; reliability projections; surface band-to-band tunneling current; Degradation; Hot carriers; Human computer interaction; Impact ionization; Instruments; MOSFETs; Stress; Testing; Tunneling; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location
San Francisco, CA
Print_ISBN
1-4244-0438-X
Electronic_ISBN
1-4244-0439-8
Type
conf
DOI
10.1109/IEDM.2006.346895
Filename
4154314
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