Enhanced Gate Induced Drain Leakage Current in HfO2 MOSFETs due to Remote Interface Trap-Assisted Tunneling

Author

Gurfinkel, M. ; Suehle, J.S. ; Bernstein, J.B. ; Shapira, Yoram

Author_Institution

Dept. of Mech. Eng., Maryland Univ., College Park, MD

fYear

2006

fDate

11-13 Dec. 2006

Firstpage

1

Lastpage

4

Abstract

High-K dielectric gate stack MOSFETs have been characterized by separating the transversal and lateral electric field contributions to the substrate current. The results show that at low gate biases the substrate current is dominated by a trap-assisted tunneling component denoted by gate induced drain leakage (GIDL) current, which is not observed in conventional SiO₂devices. Ultra-fast substrate current measurements rule out transient charging of the gate oxide as the cause of this component. A physical model of the observed substrate current dependence is proposed

Keywords

MOSFET; hafnium compounds; high-k dielectric thin films; interface states; leakage currents; silicon compounds; tunnelling; HfO₂; MOSFET; SiO₂; gate induced drain leakage current; high-K dielectric gate stack; remote interface trap-assisted tunneling; ultra-fast substrate current measurements; Current measurement; Dielectric substrates; Electrical resistance measurement; Electron traps; Hafnium oxide; Leakage current; MOSFET circuits; Semiconductor device measurement; Thermal engineering; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2006. IEDM '06. International

Conference_Location

San Francisco, CA

Print_ISBN

1-4244-0439-8

Electronic_ISBN

1-4244-0439-8

Type

conf

DOI

10.1109/IEDM.2006.346896

Filename

4154315