DocumentCode :
2388967
Title :
Integrated Circuits and Manufacturing - Non Volatile Memories: NAND Flash, FRAM and PRAM
fYear :
2006
fDate :
11-13 Dec. 2006
Firstpage :
1
Lastpage :
1
Keywords :
Electron traps; Ferroelectric films; FinFETs; Flash memory; Integrated circuit manufacture; Nonvolatile memory; Paper technology; Phase change random access memory; Random access memory; Stacking;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0438-X
Type :
conf
DOI :
10.1109/IEDM.2006.346899
Filename :
4154318
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2388967
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