DocumentCode
2388983
Title
Highly Manufacturable 32Gb Multi -- Level NAND Flash Memory with 0.0098 μm2 Cell Size using TANOS(Si - Oxide - Al2O3 - TaN) Cell Technology
Author
Park, Youngwoo ; Choi, Jungdal ; Kang, Changseok ; Lee, ChangHyun ; Shin, Yuchoel ; Choi, Bonghyn ; Kim, Juhung ; Jeon, Sanghun ; Sel, Jongsun ; Park, Jintaek ; Choi, Kihwan ; Yoo, Taehwa ; Sim, Jaesung ; Kim, Kinam
Author_Institution
Semicond. R&D Center, Samsung Electron. Co., Ltd., Kyungki-Do
fYear
2006
fDate
11-13 Dec. 2006
Firstpage
1
Lastpage
4
Abstract
A highly manufacturable 32Gb multi-level NAND flash memory with 0.0098 μm2 cell size using 40nm TANOS cell technologies has been successfully developed for the first time. The main key technologies of 40nm 32Gb NAND flash are advanced high N.A immersion photolithography with off-axis illumination system, advanced blocking oxide of the TANOS cell, and PVD tungsten and flowable oxide for bit line
Keywords
NAND circuits; alumina; flash memories; immersion lithography; silicon compounds; tantalum compounds; tungsten; 32 Gbit; 40 nm; PVD tungsten; Si-Al2O3-TaN; TANOS cell technology; high N.A immersion photolithography; highly manufacturable multilevel NAND flash memory; off-axis illumination system; Aluminum oxide; Atherosclerosis; Delay lines; Flash memory; Lighting; Lithography; Manufacturing; Silicon compounds; Threshold voltage; Tungsten;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location
San Francisco, CA
Print_ISBN
1-4244-0438-X
Electronic_ISBN
1-4244-0439-8
Type
conf
DOI
10.1109/IEDM.2006.346900
Filename
4154319
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