Improved post-cycling characteristic of FinFET NAND Flash

Author

Lee, Se Hoon ; Lee, Jong Jin ; Choe, Jeong-Dong ; Cho, Eun Suk ; Ahn, Young Joon ; Hwang, Won ; Kim, Taeyong ; Kim, Woo-Jung ; Yoon, Young-Bae ; Jang, Donghoon ; Yoo, Jongryeol ; Kim, Dongdae ; Park, Kyucharn ; Park, Donggun ; Ryu, Byung-Il

Author_Institution

Device Res. Team, Samsung Electron. Co., Gyeonggi-Do

fYear

2006

fDate

11-13 Dec. 2006

Firstpage

1

Lastpage

4

Abstract

In this paper, SONOS type FinFET device has been fabricated and characterized for the NAND flash application. Pre- and post-cycling characteristics are mainly studied both for the FinFET and planar device, with respect to the memory cell performance and device reliability. It has been demonstrated that the performance improvement of the FinFET is maintained after cycling stress, and most importantly, the superior bake retention characteristic of FinFET device is observed after cycling stress compared to the planar device

Keywords

MOSFET; NAND circuits; flash memories; reliability; NAND flash; SONOS type FinFET device; device reliability; planar device; post-cycling characteristic; Aluminum oxide; Controllability; Dielectrics; Electronic equipment testing; FinFETs; Maintenance; Research and development; SONOS devices; Semiconductor device testing; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2006. IEDM '06. International

Conference_Location

San Francisco, CA

Print_ISBN

1-4244-0438-X

Electronic_ISBN

1-4244-0439-8

Type

conf

DOI

10.1109/IEDM.2006.346901

Filename

4154320