Title :
Manufacturing Technologies for a Highly Reliable, 0.34 μm2-Cell, 64 Mb, and 1T1C FRAM
Author :
Kim, J.H. ; Jung, D.J. ; Kang, S.K. ; Kang, Y.M. ; Kim, H.H. ; Kang, J.Y. ; Lee, E.S. ; Jung, W.W. ; Joo, H.J. ; Jung, J.Y. ; Park, J.H. ; Kim, H. ; Choi, D.Y. ; Lee, S.Y. ; Jeong, H.S. ; Kim, Kinam
Author_Institution :
Semicond. R&D Center, Samsung Electron. Co. Ltd., Kyungki-Do
Abstract :
64 Mb FRAM with a 1T1C scheme has progressed greatly for mass production in terms of a highly reliable device. For the first time, package-level reliabilities of the memory were evaluated systematically and massively. The authors scrutinized the device reliabilities in accelerated manners, one of which is high-temperature-operating-life (HTOL) test; and the other is high-temperature-storage (HTS) test. Random-single-bit failures appeared from the tests were not attributed to intrinsic causes but extrinsic ones. The extrinsic mostly come from poor interconnections between a cell capacitor and its near-contact nodes. As a result of applying novel schemes to remove the analyzed defectives, the authors have the FRAM with no bit failure up to 1000 hours over both HTOL and HTS tests
Keywords :
high-temperature electronics; random-access storage; reliability; 1T1C scheme; 64 Mbit; FRAM; high-temperature-operating-life test; high-temperature-storage test; highly reliable device; manufacturing technologies; package-level reliabilities; Capacitors; Ferroelectric films; High temperature superconductors; Life estimation; Manufacturing; Mass production; Nonvolatile memory; Packaging; Random access memory; Testing;
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0438-X
Electronic_ISBN :
1-4244-0439-8
DOI :
10.1109/IEDM.2006.346904
